Related papers: Cryogenic Memory Architecture Integrating Spin Hal…
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…
This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…
We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and…
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…
Reservoir computing is a highly efficient machine learning framework for processing temporal data by extracting features from the input signal and mapping them into higher dimensional spaces. Physical reservoir layers have been realized…
Manufacturing-viable neuromorphic chips require novel computer architectures to achieve the massively parallel and efficient information processing the brain supports so effortlessly. Emerging event-based architectures are making this dream…
Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…
This paper presents a novel approach utilizing a scalable neural decoder application-specific integrated circuit (ASIC) based on metal oxide memristors in a 180nm CMOS technology. The ASIC architecture employs in-memory computing with…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
Spin Hall effect converts charge current to spin current, which can exert spin-torque to switch the magnetization of a nanomagnet. Recently, it is shown that the ratio of spin current to charge current using spin Hall effect can be made…
Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…
Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally intensive combinatorial optimization problems (COPs). While…