Related papers: Spin Logic Devices via Electric Field Controlled M…
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($…
Spin wave, the precession of magnetic order in magnetic materials, is a collective excitation that carries spin angular momentum. Similar to the acoustic or optical waves, the spin wave also possesses the polarization degree of freedom.…
Using micromagnetic simulations we demonstrate core reversal of a fixed magnetic skyrmion by modulating the perpendicular magnetic anisotropy of a nanomagnet with an electric field. We can switch reversibly between two skyrmion states and…
The optical generation of nonequilibrium spin magnetization plays a crucial role in advancing spintronics, providing ultrafast control of magnetization dynamics without the need for magnetic fields. Here, we demonstrate the feasibility of…
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…
The magnetization reversal in a single molecular magnet (SMM) weakly coupled to an electrode with spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated by means of the rate equation. A microscopic…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
We demonstrate a deterministic switching mechanism in collinear altermagnets driven by asymmetric sublattice spin currents. Unlike conventional antiferromagnets, where combined parity-time-reversal symmetry enforces purely staggered…
Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
We propose a spin-mechanical device to control and detect spin currents by mechanical torque. Our hybrid nano-electro-mechanical device, which contains a nanowire with a ferromagnetic-nonmagnetic interface, is designed to measure or induce…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa…
Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…
Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied…