Related papers: Valley Acoustoelectric Effect
Sliding ferroelectricity is a phenomenon that arises from the insurgence of spontaneous electronic polarization perpendicular to the layers of two-dimensional (2D) systems upon the relative sliding of the atomic layer constituents. Because…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
The valley-related multiple topological phase transitions attracted significant attention due to their providing significant opportunities for fundamental research and practical applications. However, unfortunately, to date there is no real…
Valley degrees of freedom in transition-metal dichalcogenides influence thoroughly electron-phonon coupling and its nonequilibrium dynamics. We conducted a first-principles study of the quantum kinetics of chiral phonons following…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
Noncentrosymmetric nature of single-layer transition metal dichalcogenides manifest itself in the finite piezoelectricity and valley-Zeeman coupling. We microscopically model nonlinear exciton transport in nano-bubble of single-layers of…
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…
Phase transitions are characterized by a sharp change in the type of dynamics of microparticles, and their description usually requires quantum mechanics. Recently, a peculiar type of conductors was discovered in which two-dimensional (2D)…
The dc current induced by a coherent surface acoustic wave (SAW) of wave vector q in a ballistic channel of length L is calculated. The current contains two contributions, even and odd in q. The even current exists only in a asymmetric…
In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS$_2$, lead strong couplings…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…
Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of…
Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain…
A monolayer of a transition metal dichalcogenide (TMD) such as WSe$_2$ is a two-dimensional (2D) direct band-gap valley-semiconductor having an effective Honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Spin-orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. Likewise, in the optical domain, a synthetic spin-orbit coupling is accessible, for instance, by engineering optical anisotropies…
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…
Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can…