Related papers: MoS2 Field Effect Transistors based sensors for lo…
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered twodimensional (2D) TaS2. Combined X-ray…
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…
We present an optofluidic sensor based on an elastomeric two-dimensional (2D) grating integrated inside a hemispherical fluid chamber. Laser beam is diffracted before (reflection) and after (transmission) going through the grating and…
A system of modular sealed gas target cells has been developed for use in electron scattering experiments at the Thomas Jefferson National Accelerator Facility (Jefferson Lab). This system was initially developed to complete the MARATHON…
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…
Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and…
There has been budding demand for the fast, reliable, inexpensive, non-invasive, sensitive, and compact sensors with low power consumption in various fields, such as defence, chemical sensing, health care, and safe environment monitoring…
Transition-edge sensors (TESs) have the potential to perform electron spectroscopic measurements with far greater measurement rates and efficiencies than can be achieved using existing electron spectrometers. Existing spectrometers filter…
Molybdenum disulfide (MoS$_2$) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS$_2$ flakes can show high mobilities and have even been integrated in…
Here, an ultra-small size, simple and inexpensive metal oxide semiconductor field effect transistor (MOSFET)-integrated needle type EGFET pH microsensor was fabricated. The EGFET pH microsensor has the potential to be applied to fast and…
A quality assurance and performance qualification laboratory was built at McGill University for the Canadian-made small-strip Thin Gap Chamber (sTGC) muon detectors produced for the 2019-2020 ATLAS experiment muon spectrometer upgrade. The…
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and…
MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance.…
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…
Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their performance is strongly limited by low-frequency noise (LFN). Here,…
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and…
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…
We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS$_2$). This is the first observation of a CDW in any $d^2$ (column 6) transition metal dichalcogenide (TMD). The band…
The use of highly sensitive pixelated direct detectors has dramatically improved the performance of high energy instrumentation such as transmission electron microscopy. Here, we describe a recently developed monolithic active pixel sensor…