Related papers: Low offset frequency $1/f$ flicker noise in spin t…
An oscillatory magnetic field dependence of the DC voltage is observed when a low-frequency current flows through superconducting Sn-Ge thin-film composites near the percolation threshold. The paper also studies the experimental…
A combined bottom-up assembly of electrodeposited nanowires and electron beam lithography technique has been developed to investigate the spin transfer torque and microwave emission on specially designed nanowires containing a single…
Spin-torque oscillators are strong candidates as nano-scale microwave generators and detectors. However, because of large amplitude-phase coupling (non-linearity), phase noise is enhanced over other linear auto-oscillators. One way to…
We demonstrate that the transient non-autonomous dynamics of a spin torque nano-oscillator (STNO) under a radio-frequency (rf) driving signal is qualitatively different from the dynamics described by the Adler model. If the external rf…
We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to…
We investigate a problem of the necessary and sufficient conditions for appearance of the 1/f fluctuations in the simple systems affected by the external random perturbations, i.e. the power spectral density of the flux of particles moving…
Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane…
We present and analyze the simple analytically solvable model of 1/f noise, which can be relevant for the understanding of the origin, main properties and parameter dependencies of the flicker noise. In the model, the currents or signals…
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…
It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…
We measure oscillator phase from the zero crossings of the voltage vs. time waveform of a spin torque nanocontact oscillating in a vortex mode. The power spectrum of the phase noise varies with Fourier frequency $f$ as $1/f^2$, consistent…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical…
The phenomenon of stochastic resonance (SR) has been mainly studied in one-dimensional systems with additive noise. We show that in higher dimensional systems and in the presence of multiplicative noise, a non-linear magnetic system with a…
Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$\alpha$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
Slow noise processes, with characteristic timescales ~1s, have been studied in planar superconducting resonators. A frequency locked loop is employed to track deviations of the resonator centre frequency with high precision and bandwidth.…
Tunnel magnetoresistance (TMR) sensor is a highly sensitive magnetic field sensor and is expected to be applied in various fields, such as magnetic recording, industrial sensing, and bio-medical sensing. To improve the detection capability…
Amplification is usually necessary when measuring the frequency instability of microwave signals. In this work, we develop a flicker noise free frequency measurement system based on a common or shared amplifier. First, we show that…
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…