Related papers: Current localisation and redistribution as the bas…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired negative differential resistance characteristics, which is…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's…
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are…
A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
Accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low dimensional materials and interfaces, of superconducting thin films and of electronic…
Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they…
Anomalous resistance upturn and downturn have been observed on the topological insulator (TI) surface in superconductor-TI (NbN-Bi1.95Sb0.05Se3) heterostructures at ~ mm length scales away from the interface. Magnetotransport measurements…
No-insulation (NI) coils are known for their high thermal stability and self-protection features due to turn-to-turn contacts. Parallel co-winding is a promising method to reduce the charging delay of NI coils while maintaining thermal…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
We develop an analytical theory of the localization-delocalization transition for a disordered Bose system, focusing on a Cooper-pair insulator. We consider a chain of small superconducting granules coupled via Josephson links and show that…
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon…
The nanoscopic characterization of ferroelectric thin films is crucial from their device application point of view. Standard characterization techniques are based on detecting the nanoscopic charge compensation current (switching current)…
Superconducting fluctuations in long and narrow strips made from ultrathin NbN films, have been investigated. For large bias currents close to the critical current fluctuations led to localized, temporary transitions into the normal…
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…
We find the relation between the energy of the absorbed photon and the threshold current at which the resistive state appears in the current-carrying superconducting film with the probability about unity. In our calculations we use the…
Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…