Related papers: Oxide layer thickness effects on the resistance sw…
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Zirconia nanotubular layer with an outer tube diameter 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
Study on mechanical properties of one-dimensional layered titanate nanomaterials is crucial since they demonstrate important applications in various fields. Here, we conducted ex situ and in situ atomic-scale investigation on bending…
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2.…
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
In the present work we investigate various optical properties (such as light absorption and reflectance) of anodic TiO2 nanotubes layers directly transferred as self-standing membranes onto quartz substrates. This allows investigation in a…
In this work, we have developed economic process to elaborate scalable titanium dioxide nanotube layers which show a tunable functionality. The titanium dioxide nanotube layers was prepared by electrochemical anodization of Ti foil in 0.4…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Shape memory effect associated with martensitic transformations is of the rapidly developing field in nanotechnologies, where industrial use of systems established on that effect provide greater flexibility on the nano-devices fabrication…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
The thermal stability and melting behavior of ultrathin titanium nanowires with multi-shell cylindrical structures are studied using molecular dynamic simulation. The melting temperatures of titanium nanowires show remarkable dependence on…
We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…
Titanium dioxide (TiO2) memristors exhibit complex conduction mechanism. Several models of different complexity have been developed in order to mimic the experimental results for physical behaviors observed in memristor devices. Pickett's…
We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic…