Related papers: Quantum Tunneling Hygrometer with Temperature Stab…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended…
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been…
The qualities of electron refrigeration by means of tunnel junctions between superconducting and normal--metal electrodes are studied theoretically. A suitable approximation of the basic expression for the heat current across those tunnel…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
The precise measurement of low temperatures is significant for both the fundamental understanding of physical processes and technological applications. In this work, we present a method for low-temperature measurement that improves thermal…
We explore the heat current in the quantum Hall edge at filling factors $\nu = 1$ and $\nu = 2$ in the presence of dissipation. Dissipation arises in the compressible strip forming at the edge in presence of a smooth confining potential.…
Employing the Anderson impurity model, we study tunneling properties through an ideal quantum dot near the conductance minima. Considering the Coulomb blockade and the quantum confinement on an equal footing, we have obtained current…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
A break in traditional pore morphology approach, is presented here to see its niche merit over the conventional sensors for water vapour detection. Tubular pores were replaced with normal cone for trace- and inverse cone for RH- level…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique…
Cooling nanoelectronic devices below 10 mK is a great challenge since thermal conductivities become very small, thus creating a pronounced sensitivity to heat leaks. Here, we overcome these difficulties by using adiabatic demagnetization of…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
We investigate how temperature affects transport through large networks of nonlinear conductances with distributed thresholds. In monolayers of weakly-coupled gold nanocrystals, quenched charge disorder produces a range of local thresholds…
The reliability of bump connection structures has become a critical aspect of future silicon detectors for particle physics. The High Granularity Timing Detector (HGTD) for the ATLAS experiment at the High-Luminosity Large Hadron Collider…
Toward measuring the thermal properties of exfoliated atomically thin materials, we demonstrate simultaneous measurements of the thermal conductivity and specific heat in suspended membranes. We use the 3{\omega} technique applied to…
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were…