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Related papers: Diode effect in the lateral spin valve

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An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between…

Mesoscale and Nanoscale Physics · Physics 2010-04-12 E. Jaromirska , P. Balaz , L. Lopez Diaz , J. Barnas

Monoaxial chiral magnets exhibit a chiral conical magnetic state in a magnetic field parallel to the chiral axis. The conical spins carry the potential for nonreciprocal transport phenomena, as they break both spatial inversion and time…

Strongly Correlated Electrons · Physics 2019-07-24 Shun Okumura , Hiroaki Ishizuka , Yasuyuki Kato , Jun-ichiro Ohe , Yukitoshi Motome

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

Applied Physics · Physics 2020-07-22 Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent…

We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by…

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…

Mesoscale and Nanoscale Physics · Physics 2010-01-20 Wei Han , K. Pi , W. Bao , K. M. McCreary , Yan Li , W. H. Wang , C. N. Lau , R. K. Kawakami

We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the…

We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local…

Materials Science · Physics 2010-11-11 Mariusz Ciorga , Christian Wolf , Andreas Einwanger , Martin Utz , Dieter Schuh , Dieter Weiss

We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…

Mesoscale and Nanoscale Physics · Physics 2015-10-12 Estitxu Villamor , Luis E. Hueso , Fèlix Casanova

We explore thermoelectric spin transport and spin dependent phenomena in a non-collinear quantum dot spin valve set up. Using this set up, we demonstrate the possibility of a thermoelectric excitation of single spin dynamics inside the…

Mesoscale and Nanoscale Physics · Physics 2013-07-04 Bhaskaran Muralidharan , Milena Grifoni

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle…

In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If…

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…

We study the effect of the ferromagnetic (FM) contacts on the spin accumulation in the lateral spin valve system for the collinear magnetization configurations. When an additional FM electrode is introduced in the all-metallic lateral…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Tae-Suk Kim , B. C. Lee , Hyun-Woo Lee

We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly-polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry-forbidden. This opens a…

Mesoscale and Nanoscale Physics · Physics 2024-07-26 Hui Wang , Huiying Liu , Xukun Feng , Jin Cao , Weikang Wu , Shen Lai , Weibo Gao , Cong Xiao , Shengyuan A. Yang

We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…

Materials Science · Physics 2009-11-11 M. Hruska , S. Kos , S. A. Crooker , A. Saxena , D. L. Smith

We theoretically study the effect of exchange interaction on the non-equilibrium spin waves in disordered paramagnetic metals under the spin injection condition. We show that the gapless spectrum of spin waves, describing the spin…

Mesoscale and Nanoscale Physics · Physics 2010-07-29 A. A. Zyuzin , A. Yu. Zyuzin

We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…

Materials Science · Physics 2014-05-06 André Dankert , Mutta Venkata Kamalakar , Johan Bergsten , Saroj P. Dash

The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 S. Omar , M. Gurram , K. Watanabe , T. Taniguchi , M. H. D. Guimarães , B. J. van Wees