Related papers: HALLS: An Energy-Efficient Highly Adaptable Last L…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

Both SRAM and DRAM have stopped scaling: there is no technical roadmap to reduce their cost (per byte/GB). As a result, memory now dominates system cost. This paper argues for a paradigm shift from today's simple memory hierarchy toward…

Current day processors employ multi-level cache hierarchy with one or two levels of private caches and a shared last-level cache (LLC). An efficient cache replacement policy at LLC is essential for reducing the off-chip memory transfer as…

Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature…

As CMOS nears the end of the projected scaling roadmap, significant effort has been devoted to the search for new materials and devices that can realize memory and logic. Spintronics, is one of the promising directions for the Post-CMOS…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

In modern systems, DRAM-based main memory is significantly slower than the processor. Consequently, processors spend a long time waiting to access data from main memory, making the long main memory access latency one of the most critical…

Last-level cache (LLC) partitioning is a technique to provide temporal isolation and low worst-case latency (WCL) bounds when cores access the shared LLC in multicore safety-critical systems. A typical approach to cache partitioning…

Non-volatile memory (NVM) technologies are interesting alternatives for building the on-chip Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but each write operation slightly…

Modern multicore processors are employing large last-level caches, for example Intel's E7-8800 processor uses 24MB L3 cache. Further, with each CMOS technology generation, leakage energy has been dramatically increasing and hence, leakage…

To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. However, the read delay distribution of the SRAM cells under the…

In this paper, we demonstrate the design of efficient and high-performance AI/Deep Learning accelerators with customized STT-MRAM and a reconfigurable core. Based on model-driven detailed design space exploration, we present the design…

Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this…

Whereas contemporary Error Correcting Codes (ECC) designs occupy a significant fraction of total die area in chip-multiprocessors (CMPs), approaches to deal with the vulnerability increase of CMP architecture against Single Event Upsets…

Processing-in-cache (PiC) and Processing-in-memory (PiM) architectures, especially those utilizing bit-line computing, offer promising solutions to mitigate data movement bottlenecks within the memory hierarchy. While previous studies have…

Heterogeneous systems appear as a viable design alternative for the dark silicon era. In this paradigm, a processor chip includes several different technological alternatives for implementing a certain logical block (e.g., core, on-chip…