Related papers: HALLS: An Energy-Efficient Highly Adaptable Last L…

In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…

The number of battery-powered devices is rapidly increasing due to the widespread use of IoT-enabled nodes in various fields. Energy harvesters, which help to power embedded devices, are a feasible alternative to replacing battery-powered…

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

In this paper, we propose a 'full-stack' solution to designing high capacity and low latency on-chip cache hierarchies by starting at the circuit level of the hardware design stack. First, we propose a novel Gain Cell (GC) design using…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

This paper summarizes the idea of Tiered-Latency DRAM, which was published in HPCA 2013. The key goal of TL-DRAM is to provide low DRAM latency at low cost, a critical problem in modern memory systems. To this end, TL-DRAM introduces…

An effective way to improve energy efficiency is to throttle hardware resources to meet a certain performance target, specified as a QoS constraint, associated with all applications running on a multicore system. Prior art has proposed…

This paper summarizes the idea of Tiered-Latency DRAM (TL-DRAM), which was published in HPCA 2013, and examines the work's significance and future potential. The capacity and cost-per-bit of DRAM have historically scaled to satisfy the…

Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…

We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…

A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

With technology scaling, the size of cache systems in chip-multiprocessors (CMPs) has been dramatically increased to efficiently store and manipulate a large amount of data in future applications and decrease the gap between cores and…

Cache plays a critical role in reducing the performance gap between CPU and main memory. A modern multi-core CPU generally employs a multi-level hierarchy of caches, through which the most recently and frequently used data are maintained in…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the DRAM timing parameters to reduce DRAM latency. The key…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

In this work, we propose FUSE, a novel GPU cache system that integrates spin-transfer torque magnetic random-access memory (STT-MRAM) into the on-chip L1D cache. FUSE can minimize the number of outgoing memory accesses over the…