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Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge…
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of…
The influence of hydrostatic pressure and ab-plane strain on the magnetic structure of FeTe is investigated from first principles. The results of calculations reveal a phase transition from antiferromagnetic double-stripe ordering at…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si,…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…
We have studied the electrical field induced conductance transition in thin film of Perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to conducting state with a high ON-OFF ratio in those…
Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…
Since there is both strong electron-phonon coupling during a ferroelectric/FE transition and superconducting/SC transition, it has been an important topic to explore superconductivity from the FE instability. Sn$_2$P$_2$Se$_6$ arouses broad…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching…
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…
Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…