Related papers: Nonvolatile Memory Cell Based on Memristor Emulato…
As a potential revolutionary topic in future information processing, mechanical computing has gained tremendous attention for replacing or supplementing conventional electronics vulnerable to power outages, security attacks, and harsh…
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
In this paper we revisit the memristor concept within circuit theory. We start from the definition of the basic circuit elements, then we introduce the original formulation of the memristor concept and summarize some of the controversies on…
Memristor networks are capable of low-power and massive parallel processing and information storage. Moreover, they have presented the ability to apply for a vast number of intelligent data analysis applications targeting mobile edge…
Non-linear neuron models overcomes the limitations of linear binary models of neurons that have the inability to compute linearly non-separable functions such as XOR. While several biologically plausible models based on dendrite thresholds…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…
Recent results in adaptive matter revived the interest in the implementation of novel devices able to perform brain-like operations. Here we introduce a training algorithm for a memristor network which is inspired in previous work on…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
Memristors have been suggested as a novel route to neuromorphic computing based on the similarity between neurons (synapses and ion pumps) and memristors. The D.C. action of the memristor is a current spike, which we think will be fruitful…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Recent advancements in reservoir computing research have created a demand for analog devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
The advent of nanoscale memristors raised hopes of being able to build CMOL (CMOS/nanowire/moLecular) type ultra-dense in-memory-computing circuit architectures. In CMOL, nanoscale memristors would be fabricated at the intersection of…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and…
We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant.…
Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration…