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Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space…
We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling…
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain…
We discuss a new class of Micro Pattern Gas Detectors, the Gas Pixel Detector (GPD), in which a complete integration between the gas amplification structure and the read-out electronics has been reached. An Application-Specific Integrated…
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters…
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy;…
The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light absorption due to their small absorption cross section,…
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range.…
An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting…
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a…
The development of wearable photodetectors demands a unique combination of broadband optical sensitivity, mechanical flexibility, and skin-compatibility, with these requirements rarely met simultaneously by existing technologies. Here, we…
Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to…
Plasmons in graphene nanostructures show great promise for mid-infrared applications ranging from a few to tens of microns. However, mid-infrared plasmonic resonances in graphene nanostructures are usually weak and narrow-banded, limiting…
Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive…
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics,…