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Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…

Materials Science · Physics 2015-05-30 Fabien Alibart , Ligang Gao , Brian Hoskins , Dmitri Strukov

We present a hybrid device platform for creating an electrically reconfigurable metasurface formed by the integration of plasmonic nanostructures with phase-change material germanium antimony telluride (GST). By changing the phase of GST…

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…

Applied Physics · Physics 2025-08-25 Yuriy V. Pershin , Liya Patel , Bapi Berra , Doug Aaron , Stephen A. Sarles

Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…

Materials Science · Physics 2016-06-20 W. Román Acevedo , D. Rubi , J. Lecourt , U. Lüders , F. Gomez-Marlasca , P. Granell , F. Golmar , P. Levy

The scaling of active photonic devices to deep-submicron length-scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Here, we demonstrate a solid state…

Materials Science · Physics 2016-08-24 David T. Schoen , Aaron Holsteen , Mark L. Brongersma

The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…

Materials Science · Physics 2013-04-23 Laurent Cario , Cristian Vaju , Benoit Corraze , Vincent Guiot , Etienne Janod

Inducing a large refractive-index change is the holy grail of reconfigurable photonic structures, a goal that has long been the driving force behind the discovery of new optical material platforms. Recently, the unprecedentedly large…

Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the…

Since its inception the memristive fuse has been a good example of how small numbers of memristors can be combined to obtain useful behaviours unachievable by individual devices. In this work, we link the memristive fuse concept with that…

Emerging Technologies · Computer Science 2016-09-09 Alexander Serb , Ali Khiat , Themistoklis Prodromakis

Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to…

Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light,…

A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This sudden resistive switching effect is largely exploited in…

Mesoscale and Nanoscale Physics · Physics 2023-08-25 S. Hamdad , K. Malchow , E. Dujardin , A. Bouhelier , B. Cheng , T. Zellweger , J. Leuthold

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

Strongly Correlated Electrons · Physics 2015-01-15 H. Oike , F. Kagawa , N. Ogawa , A. Ueda , H. Mori , M. Kawasaki , Y. Tokura

Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently,…

We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…

Optics · Physics 2009-11-29 Sergei V. Zhukovsky , Dmitry N. Chigrin

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…