Related papers: Miniature Multi-Level Optical Memristive Switch Us…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as…
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such…
Optical control of electronic properties is essential for future electric devices. Manipulating such properties has been limited to the microscale in spatial volume due to the wave nature of light; however, scaling down the volume is in…
A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
In this paper we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle)…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Y-Flash memristors utilize the mature technology of single polysilicon floating gate non-volatile memories (NVM). It can be operated in a two-terminal configuration similar to the other emerging memristive devices, i.e., resistive…
The great potential of memristive devices for real-world applications still relies on overcoming key technical challenges, including the need for a larger number of stable resistance states, faster switching speeds, lower SET/RESET…
We propose and numerically analyze the hybrid Si-Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} strip waveguide switches for Mid-IR wavelength of 2.1 $\mu$m. The switches investigated are one input-one output (on-off) type and…
Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process…
Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a…
We demonstrate power-efficient, thermo-optic, silicon nitride waveguide phase shifters for blue, green, and yellow wavelengths. The phase shifters operated with low power consumption due to a suspended structure and multi-pass waveguide…
A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting…
All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been…