Related papers: Engineering tunnel junctions on ballistic semicond…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid…
We study the conductance of a junction between the normal and superconducting segments of a nanowire, both of which are subjected to spin-orbit coupling and an external magnetic field. We directly compare the transport properties of the…
By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross…
Proposals for studying topological superconductivity and Majorana bound states in nanowires proximity coupled to superconductors require that transport in the nanowire is ballistic. Previous work on hybrid nanowire-superconductor systems…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
Finding a clear signature of topological superconductivity in transport experiments remains an outstanding challenge. In this work, we propose exploiting the unique properties of three-dimensional topological insulator nanowires to generate…
We theoretically investigate electronic transport through a junction where a quantum dot (QD) is tunnel coupled on both sides to semiconductor nanowires with strong spin-orbit interaction and proximity-induced superconductivity. The results…
We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical…
Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of…
The properties of nanoscopic superconducting structures fabricated with a scanning tunnelling microscope are reviewed, with emphasis on the effects of high magnetic fields. These systems include the smallest superconducting junctions which…
Superconducting junctions are widely used in multitude of applications ranging from quantum information science and sensing to solid-state cooling. Traditionally, such devices must be fabricated on flat substrates using standard…
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and…
This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…