Related papers: Two-Dimensional Room Temperature Ferromagnetic Sem…
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of…
Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic…
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic…
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS…
We predict the possibility of realizing room-temperature superconductivity in different 2D domains within the ceramic high-Tc cuprates at ambient pressure and experimentally confirm this prediction of 2D room-temperature superconductivity…
Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero…
Magneto-resistive and magneto-caloric properties of polycrystalline Pr2/3Sr1/3MnO3 have been studied as a function of sintering temperature (Ts) between 1260-1450{\deg}C. Reitveld refinement of their X-ray diffraction (XRD) patterns…
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin…
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal…
The classic Thouless-Kohmoto-Nightingale-Nijs theorem dictates that a single electron band of a lattice can only harbor an integer quantum Hall conductance as a multiple of e^2/2h, while recent studies have pointed to the emergence of half…
It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains…
We have recently observed a giant electrocaloric effect (12 K in 25 V) in 350 nm sol-gel Pb Zr_0.95 Ti_0.05 O_3 films near the ferroelectric Curie temperature of 242oC. Here we demonstrate a giant electrocaloric effect (5 K in 25 V) in 260…
The development of room-temperature magnetic semiconductors is critical for advancing spintronic technologies, yet van der Waals magnets like CrI3 exhibit intrinsically low Curie temperatures (Tc = 45 K). This study employs first-principles…
Low-energy electronic states in monolayer and bilayer graphenes present chiral charge carriers with unique and unusual properties of interest for electronic applications. Here, we report the magnetotransport measurements in the ABC-stacked…
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to…
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that…
Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic…
Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic…
We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly…
Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature (T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition (T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from in-plane to…