Related papers: Valley Anisotropy in Elastic Metamaterials
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Two-dimensional (2D) noncentrosymmetric systems offer potential opportunities for exploiting the valley degrees of freedom for advanced information processing, owing to non-zero Berry curvature. However, such valley polarization in 2D…
Valley photonics has emerged as a promising platform in topological photonic systems, yet the topological nature of valley-dependent phenomena remains unsettled. Theoretically, inter-valley scattering may occur with structural…
The quantum geometric properties of Bloch electrons fundamentally govern light-matter interactions and optical selection rules in solids. In semiconducting transition-metal dichalcogenides, circularly polarized excitation near the band edge…
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
Valleytronics has emerged as a promising paradigm, enabling comprehensive control of the valley degree of freedom (DoF) for energy-efficient and high-speed information processing. However, backscattering-induced valley depolarization…
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…
We use ab initio calculations and theoretical analysis to investigate the influence of in-plane strain field on valley drifts and Berry curvatures in the monolayer MoSi$_2$N$_4$, a prototypical septuple atomic layered two-dimensional…
Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…
We investigate elastic periodic structures characterized by topologically nontrivial bandgaps supporting backscattering suppressed edge waves. These edge waves are topologically protected and are obtained by breaking inversion symmetry…
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum…
Spatial heterogeneity and phase competition are hallmarks of strongly-correlated materials, promising tunable functionality on the nanoscale. Light-induced switching of a correlated insulator to a metallic state is well established.…
Breaking parity (P) symmetry in C$_6$ symmetric crystals is a common routine to implement a valley-topological phase. At an interface between two crystals of opposite valley phases, the so-called valley topological edge states emerge, and…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in…
For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new…
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…
In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as…