Related papers: Progressive amorphization of GeSbTe phase-change m…
We report the optical perturbation of atomic arrangement in the layered GeTe/Sb_{2}Te_{3} phase change memory material. To observe the structural change, the coherent A_{1} mode of GeTe_{4} local structure is investigated at various…
The newly developed machine learning (ML) empirical pseudopotential (EP) method overcomes the poor transferability of the traditional EP method with the help of ML techniques while preserving its formal simplicity and computational…
Phase-change materials (PCMs) can switch between different crystalline states as a function of an external bias, offering a pronounced change of their dielectric function. In order to take full advantage of these features for active…
We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon…
The prevalent high intrinsic absorption in the crystalline state of phase-change materials (PCMs), typically leads to a decline in modulation efficiency for phase-change metasurfaces, underutilizing their potential for quasi-continuous…
We present thermodynamic crystallization and melting models and calculate phase change velocities in $Ge_2 Sb_2 Te_5$ based on kinetic and thermodynamic parameters. The calculated phase change velocities are strong functions of grain size,…
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…
We propose and demonstrate a simple method to accurately monitor and program arbitrary states of partial crystallization in phase-change materials (PCMs). The method relies both on the optical absorption in PCMs as well as on the physics of…
The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{4}$]$_{8}$ and [(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{1}$]$_{20}$) as well as conventional…
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…
Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phase segregation upon extensive programming. Scaling down the…
High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials…
Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast…
A self-consistent model for the simulation of Ge-rich Ge$_2$Sb$_2$Te$_5$ phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the…
Nanoconfined liquid crystals (LCs) and their nanocomposites are driving the next generation of photonic applications. Consequently, deepening our understanding of mesophase stability, defect topology, and the dynamic response of LCs at the…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Recent advances in scanning transmission electron microscopy (STEM) allow to observe solid-state transformations and reactions in materials induced by thermal stimulus or electron beam on the atomic level. However, despite the rate at which…
Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. They are widely used in current digital electronics and hold great…
Chalcogenide phase-change materials (PCMs) are important for nonvolatile memory and reconfigurable photonic technologies. The GeTe-Sb2Te3 mixture system, commonly referred to as GST, is the most well-known PCM family, but new PCMs are…