Related papers: Progressive amorphization of GeSbTe phase-change m…
Using $\approx$40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) films with various thicknesses. After excitation with a 1.53…
The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic…
Amorphous carbon films have been routinely used to enhance the preparation of frozen-hydrated transmission electron microscopy (TEM) samples, either in retaining protein concentration, providing mechanical stability or dissipating sample…
Momentum-resolved scanning transmission electron microscopy (MRSTEM) is a powerful phase-contrast technique that can map lateral magnetic and electric fields ranging from the micrometer to the subatomic scale. Resolving fields ranging from…
Reconfigurable beam splitters capable of being arbitrarily programmed for the power splitting ratios are vital for the adaptive optical networks and photonic computing. Conventional mechanisms such as thermo-optic, free-carrier, or…
Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the…
The rapid growth of brain-inspired computing coupled with the inefficiencies in the CMOS implementations of neuromrphic systems has led to intense exploration of efficient hardware implementations of the functional units of the brain,…
The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale…
Neuromorphic photonics has recently emerged as a promising hardware accelerator, with significant potential speed and energy advantages over digital electronics, for machine learning algorithms such as neural networks of various types.…
We introduce non-Hermitian plasmonic waveguide-cavity structures based on the Aubry-Andre-Harper model to realize switching between right and left topological edge states (TESs) using the phase-change material Ge$_2$Sb$_2$Te$_5$ (GST). We…
The dynamic properties of liquid phase-change materials (PCMs), such as viscosity $\eta$ and atomic self-diffusion coefficients D, play an essential role in ultrafast phase switching behavior of novel non-volatile phase-change memory…
Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…
Electron-beam-induced conversion of materials in a transmission electron microscope uses the high power density of a localized electron beam of acceleration voltages above 100 kV as an energy source to transform matter at the sub-micron…
Reconfigurable photonic devices are rapidly emerging as a cornerstone of next generation optical technologies, with wide ranging applications in quantum simulation, neuromorphic computing, and large-scale photonic processors. A central…
Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for…
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band…
We study an insulator-metal transition in a ternary chalcogenide glass (GeSe$_3$)$_{1-x}$Ag$_x$ for $x$=0.15 and 0.25. The conducting phase of the glass is obtained by using "Gap Sculpting" (Prasai et al, Sci. Rep. 5:15522 (2015)) and it is…
The fundamental electrical and thermal properties of the devices consisting of SnxTe1-x/Sb2Te3 superlattice (SnTeSL) materials have been investigated and compared with those of the conventional Ge2Sb2Te5 (GST225) and GeTe/Sb2Te3…
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum…
Shape memory alloys (SMAs) exhibit hysteresis behaviors upon stress and temperature induced loadings. In this contribution, we focus on numerical simulations of microstructure evolution of cubic-to-tetragonal martensitic phase…