Related papers: Visualizing electrostatic gating effects in two-di…
Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…
Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling…
We calculate heat transfer between a 2D sheet (e.g. graphene) and a dielectric in presence of a gate voltage. The gate potential induces surface charge densities on the sheet and dielectric, which results in electric field, which is coupled…
Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well…
For solid-state materials, the electronic structure, E(k), is critical in determining a crystal's physical properties. By experimentally detecting the electronic structure, the fundamental physics can be revealed. Angle-resolved…
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3.…
Many recent advances in our understanding of two-dimensional (2D) electron systems stem from van der Waals (vdW) heterostructures. The assembly process relies on the weak bonding across interfaces between layered vdW compounds, making it…
Electronic and optical properties of a mesoscopic heterostructure of a two-dimensional quantum ring composed of Gallium Arsenide (GaAs) semiconductors are investigated. Using the confinement potential proposed by Tan-Inkson to describe the…
Atomically thin layers of two-dimensional (2D) materials such as graphene, MoS2 and h-BN have immense potential as sensors and electronic devices thanks to their highly desirable electronic, mechanical, optical and heat transport…
The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused…
Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…
Much attention has been focused on ways of rendering graphene semiconducting. We study periodically gated graphene in a tight-binding model and find that, contrary to predictions based on the Dirac equation, it is possible to open a band…
The discovery of graphene and its fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional (2D) materials. Van der Waals (vdW) layered materials as graphene, hexagonal boron nitride (hBN), transition…
Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated…
By investigating the optoelectronic properties of prototypical graphene/hexagonal boron nitride (h-BN) heterostructures, we demonstrate how a nanostructured combination of these materials can lead to a dramatic enhancement of light-matter…
The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…
Van der Waals heterostructures made from atomically thin transition metal dichalcogenides (TMD) and graphene have emerged as a building block for optoelectronic devices. Such systems are also uniquely poised to investigate interfacial…
The electronic structure modifications of WSe2 upon NO2-adsorption at room and low temperatures were studied by means of photoelectron spectroscopy. We found only moderate changes in the electronic structure, which are manifested as an…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those…