Related papers: MOSFET GIDL Current Variation with Impurity Doping…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
We study the properties of the impurity band in heavily-doped non-magnetic semiconductors using the Jacobi-Davidson algorithm and the supervised deep learning method. The disorder averaged inverse participation ratio (IPR) and thouless…
Stationary Josephson tunnel current $I_{c}$ between superconductors with $d$-wave order parameter symmetry and charge-density-wave (CDW) partial gapping was analyzed in the two-dimensional model appropriate to high-$T_{c}$ cuprates. It was…
We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by…
The current dependence of the excess conductivity is measured up to $\simeq 3 T_c$ for a Bi$_2$Sr$_2$CuO$_{6+\delta}$ thin film, as a function of doping. It is found to be anomalously sensitive to the transport current and to behave as a…
Within the t-t'-J model, the doping dependence of charge dynamics in electron-doped cuprates is studied. The conductivity spectrum shows a pseudogap structure with a low-energy peak appearing at $\omega\sim 0$ and an rather sharp…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We investigate how a combination of a nonmagnetic-impurity scattering rate $\gamma$ and finite subgap states parametrized by Dynes $\Gamma$ affects various physical quantities relevant to to superconducting devices: kinetic inductance…
The analytical solutions of the equations describing impurity diffusion due to migration of nonequilibrium impurity interstitials were obtained for the impurity redistribution during ion implantation at elevated temperatures and for…
The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in models for diluted magnetic semiconductors (DMS) is studied systematically by taking into consideration the…
The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…
The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…
In light of recent proposals to realize a topological superconductor on the surface of strong topological insulators, we study impurity and vortex scattering in two dimensional topological superconductivity. We develop a theory of…
We investigated the nonlinear phenomena observed in the dark current of BIB (blocked-impurity-band) infrared detectors, including negative differential resistance (NDR) and current oscillations. Our analysis systematically elucidated the…
Tunneling measurements are performed on Ca-rich single crystals of Bi2Sr2CaCu2O8+d (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined…
We present observations of strength one defects and antidefects formed in isotropic-nematic phase transition in a thin layer of nematic liquid crystals, using a cross-polarizer setup. We measure the widths of the distributions of {\it net}…