Related papers: Stoichiometry, Phase, and Texture Evolution in PLD…

This work reports on the synthesis of chromium (III, IV) oxides films by KrF laser-assisted CVD. Films were deposited onto sapphire substrates at room temperature by photodissociation of Cr(CO)6 in dynamic atmospheres containing oxygen and…

The properties of epitaxial Bi2FeCrO6 thin films, recently synthesized by pulsed laser deposition, have partially confirmed the theoretical predictions (i.e. a magnetic moment of 2 muB per formula unit and a polarization of ~80 microC/cm2…

V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and…

This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet…

We report on fully epitaxial FeSe0.5Te0.5 (FST) thin films with high-quality grown on CaF2 (00l) substrate at a low temperature of 300{\deg}C by pulsed laser deposition. The transport Jc of thin films is up to 1.36 MA/cm2 in self-field and…

We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with…

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…

An electrostatic hexapole lens is used to manipulate the transverse properties of a beam of barium fluoride molecules from a cryogenic buffer gas source. The spatial distribution of the beam is measured by recording state-selective…

The epitaxial growth of anatase (001) films deposited by pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) on SrTiO3 (001) (STO) single crystals has been studied using X-ray diffraction and surface sensitivity UHV techniques.…

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and…

PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric…

Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-\delta}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were…

We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range…

We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar…

We report the structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition technique. To understand the effects of film thickness, lattice mismatch and grain size on transport properties, various oriented…

High-mobility oxide heterostructures could be applied for high-frequency devices, transparent conductors, and spin-orbit logic devices. SrTiO$_3$ is one of the most studied oxide substrate materials for heterostructures. To date, the…

Single phase nano and micro crystalline silicon films deposited using SiF4/H2 plasma at different H2 dilution levels were studied at initial and terminal stages of film growth with spectroscopic ellipsometry (SE), Raman scattering (RS) and…

$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…

A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…

The present work reports the study of the optimized processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 thin films, grown by RF sputtering on platinum metalized silicon substrates. The combination of deposition at relatively low substrate…