Related papers: Effect of density on microwave-induced resistance …
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in…
Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D…
We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an \emph{in situ} grown back gate, which allows tuning the carrier density $n$. At low $n$, when all electrons are confined to the…
We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the…
Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies…
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found…
We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high…
The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the…
We study the magnetoresistance of an ultrahigh mobility GaAs/AlGaAs two-dimensional electron sample in a weak magnetic field under low-frequency (f < 20 GHz) microwave (MW) irradiation. We observe that with decreasing MW frequency,…
Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DH's) in carbon-doped (100) GaAs/AlxGa1-xAs heterostructures. The measured m_b shows strong dependences on both the 2DH…
We report our direct study of the compressibility on ultrahigh mobility two-dimensional electron system ($\mu_{e} \sim 1 \times 10^{7}$ cm$^{2}$/Vs) in GaAs/AlGaAs quantum wells under microwave (MW) irradiation. The field penetration…
In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIRO) and the zero-resistance states observed recently on very high-mobility 2D electron gases in GaAs/AlGaAs…
We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a…
We have performed simultaneous measurements of microwave absorption/reflection and magneto-transport characteristics of a high mobility two-dimensional electrons in GaAs/AlGaAs heterostructure in regime of Microwave-Induced Resistance…
The influence of microwave radiation (1.2-140 GHz) on resistance of high-mobility two-dimensional electron gas in GaAs quantum wells is studied. Two series of microwave-induced magnetoresistance oscillations periodic in 1/B were observed…
Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain…
We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity…
We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like…
In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high…
The microwave induced magnetoresistance in GaAs/AlGaAs heterostructure was studied at temperatures below 1K and frequencies in the range of 150-400 GHz. A distinct node in the Shubnikov- de Haas oscillations, induced by the microwave…