Related papers: High-temperature deep-level transient spectroscopy…
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve…
In this work, methods to determine more accurate doping profiles in semiconductors is explored where trap-induced artifacts such as hysteresis and doping artifacts are observed. Specifically in CIGS, it is shown that this fast…
Strained layer superlattice (SLS) detectors are a new class of infrared detectors available in the scientific and commercial markets. The photosensitive bandpass is set by material and engineered properties with typical detectors covering…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…
We present an experimental setup and methodology designed to facilitate high-precision thermal measurements required for infrared medical tomography. The approach which is best suited for the study of specialized hardware phantoms comprises…
Superconducting circuits provide a versatile and controllable platform for studies of fundamental quantum phenomena as well as for quantum technology applications. A conventional technique to read out the state of a quantum circuit or to…
Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented.…
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K.…
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron…
A novel, to the best of our knowledge, ultralow-temperature luminescence thermometry strategy is proposed, based on a measurement of relative intensities of hyperfine components in the spectra of Ho$^{3+}$ ions doped into a crystal. A…
High-resolution astronomical spectroscopy carried out with a photonic Fourier transform spectrograph (FTS) requires long asymmetrical optical delay lines that can be dynamically tuned. For example, to achieve a spectral resolution of R =…
Peltier current lead was proposed to reduce heat leak from the current lead. The temperature of the hot side of semiconductors was kept to be room temperature and the liquid nitrogen was used to cool the system in the experiment. The…
Two-level system (TLS) defects in dielectrics cause decoherence in superconducting circuits, yet their origin, frequency distribution, and dipole moments remain poorly understood. Current probes, primarily based on qubits or resonators,…
The pseudogap phase above the critical temperature of high $T_{c}$ superconductors (HTSC) presents different energy scales and it is currently a matter of intense study. The complexity of the HTSC normal state requires very accurate…
Distributed temperature sensors (DTS) measure temperatures by means of optical fibers. Those optoelectronic devices provide a continuous profile of the temperature distribution along the cable. Initiated in the 1980s, DTS systems have…
Optical spectroscopy of quantum materials at ultralow temperatures is rarely explored, yet it may provide critical characterizations of quantum phases not possible using other approaches. We describe the development of a novel experimental…
Ion conducting materials are critical components of batteries, fuel cells, and devices such as memristive switches. Analytical tools are therefore sought that allow the behavior of ions in solids to be monitored and analyzed with high…