Related papers: Quantum transport in high-quality shallow InSb qua…
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field.…
The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid…
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports…
Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in…
The topological semimetal YPtBi has attracted considerable attention, owing to its novel superconducting and normal state properties. A strong band inversion from spin-orbit coupling allows the existence of $j=3/2$ quasiparticles near the…
We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
Nanowires (NWs) of topological materials are emerging as an exciting platform to probe and engineer new quantum phenomena that are hard to access in bulk phase. Their quasi-one-dimensional geometry and large surface-to-bulk ratio unlock new…
We study the multistable behavior of the intersubband optical absorption for InSb-based tunnel coupled quantum wells. We consider four sublevels coming from the Zeeman spin splitting of the two deepest levels, caused by a weak in-plane…
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb…
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…
We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their…
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
We report on two sub-band transport in double gate SiO$_2$-Si-SiO$_2$ quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total…
We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…