Related papers: On intrinsic Stokes shift in wide GaN/AlGaN polar …

In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous…

Low temperature photoluminescence and photoluminescence excitation measurements have been performed in a set of InGaAs/GaAs samples with different indium molar fraction, well width, growth conditions and post-growth treatment. This has…

Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…

The authors theoretically investigate quantum confinement and transition energies in quantum wells (QWs) asymmetrically positioned in wrinkled nanomembranes. Calculations reveal that the wrinkle profile induces both blue- and redshifts…

Nanocrystals of AgInS$_2$ demonstrate giant Stokes shifts ~ 1 eV, the nature of which is still not clearly understood. We propose a theoretical model of this phenomenon bringing together several different mechanisms previously considered…

The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…

In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally…

We study the structure of the energy spectra along with the character of the states participating in optical transitions in colloidal CdS quantum dots (QDs) using the {\sl ab initio} accuracy charge patching method combined with the…

In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effect caused by intrinsic fields. This is achieved by combining…

The photoluminescence (PL) spectrum of a two-dimensional electron gas (2DEG) in the fractional quantum Hall regime is studied as a function of the separation $d$ between the electron and valence hole layers. The abrupt change in the…

We study, theoretically and experimentally, electromagnetically induced transparency (EIT) in two different solid-state systems. Unlike many implementations in homogeneously broadened media, these systems exhibit inhomogeneous broadening of…

We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…

It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in…

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum…

The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field ($B_{\|}$) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of…

The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11}…

We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements.…

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A…

A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier…