Related papers: Weak localization in boron nitride encapsulated bi…
We report on the use of the polarized $^3$He gas filter and neutron resonant enhancement techniques for the measurement of spin-polarized diffuse neutron scattering due to ferromagnetic domains. A CoO/Co exchange biased bilayer was grown on…
A spin decoherence mechanism is proposed for localized electrons. The irregular phonon phase disturbances originated from phonon relaxation can influence electron spin precession with a net effect of spin phase decay. A quantitative…
Local magnetic field distribution B(r) in the mixed state of a boride superconductor, YB6, is studied by muon spin rotation (muSR). A comparative analysis using the modified London model and Ginzburg-Landau (GL) model indicates that the GL…
Bose-Einstein condensates of exciton-polaritons are known for their fascinating coherent and polarization properties. The spin state of the condensate is reflected in polarization of the exciton-polariton emission, with temporal…
In this paper we study the scattering of solitons in a binary Bose-Einstein Condensate (BEC) including SO- and Rabi-couplings. To this end, we derive a reduced ODE model in view to provide a variational description of the collisional…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin…
Monolayer PtSe$_2$ is a semiconducting transition metal dichalcogenide characterized by an indirect band gap, space inversion symmetry, and high carrier mobility. Strong intrinsic spin-orbit coupling and the possibility to induce extrinsic…
Hidden magnetic order of Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$, $x = 0.05$ and 0.1, has been studied using muon spin relaxation spectroscopy. In zero applied field and weak longitudinal fields ($\mu_0H_L \lesssim 2$~mT), muon spin relaxation data can…
The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferromagnetism. But in kinetically frustrated systems, such as hole…
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…
We experimentally investigate the dynamics of spin solitary waves (magnetic solitons) in a harmonically trapped, binary superfluid mixture. We measure the in-situ density of each pseudospin component and their relative local phase via an…
Optical excitations in moir\'e transition metal dichalcogenide bilayers lead to the creation of excitons, as electron-hole bound states, that are generically considered within a Bose-Hubbard framework. Here, we demonstrate that these…
Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer…
Mechanically isolated defect centers in hexagonal boron nitride are promising coherent quantum emitters, yet spectral instabilities persist, and their spin-related nature remains unclear. Here we investigate a single mechanically isolated…
The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may…
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological…