Related papers: Telecommunication wavelength confined Tamm plasmon…
It is shown that cavities formed between a multilayer quarter-wave Bragg reflector and a metal mirror which support Tamm plasmons can be modelled by using a hard-mirror approximation including appropriate penetration depths into the…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
Tamm polaritons (TPs) are formed at the interface between two semi-infinite periodic dielectric structures (Bragg mirrors) or other reflectors. Contrary to usual surface polaritons, TPs exist inside the "light cone", even though their…
We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated…
We report on the enhancement of the spontaneous emission in the visible red spectral range from site-controlled InP/GaInP quantum dots by resonant coupling to Tammplasmon modes confined beneath gold disks in a hybrid metal/semiconductor…
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of…
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry…
Tunable plasmonic resonances across the visible and near infrared spectra have provided novel ways to develop next-generation nanophotonic devices. In this study, by using optothermally controllable phase-changing material (PCM), we…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…
Electromagnetic resonators, which are based on optical cavities or electronic circuits, are key elements to enhance and control light-matter interaction. In the THz range, current optical cavities exhibit very high-quality factors with…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…
We demonstrate strong confinement of the optical field by depositing a micron sized metallic disk on a planar interferential mirror. Zero dimensional Tamm plasmon modes are evidenced both experimentally and theoretically, with a lateral…
Telecom wavelength quantum dots (QDs) are emerging as a promising solution for generating deterministic single photons compatible with existing fiber optic infrastructure. Emission in the low loss C band minimizes transmission losses,…
We report for the first time the bandgap engineering of Tamm plasmon photonic crystals - Tamm plasmon structures of which the metalic layer is periodically patterned into lattice of subwavelength period. By adopting a double period design,…
We developed a hydrodynamic model of plasmonic crystals formed in the current-driven grating gate transistor structures. The model demonstrates that the quality factor of plasmonic resonances could be increased by using ungated regions with…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
Incorporation of responsive elements into photonic crystals is an effective strategy for building up active optical components to be used as sensors, actuators and modulators. In these regards, Tamm Plasmon (TP) modes have arisen recently…