Related papers: Clockless Spin-based Look-Up Tables with Wide Read…

New computing technologies are being sought near the end of CMOS transistor scaling, meanwhile superconducting digital, i.e., single-flux quantum (SFQ), logic allows incredibly efficient gates which are relevant to the impending transition.…

Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier…

For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT…

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…

Digital computing currently uses irreversible logic gates whose energy dissipation is fundamentally limited. Reversible logic gates can provide an energy-efficient alternative since they can operate with reversible processes that have no…

We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…

We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…

Efficient neural networks (NNs) leveraging lookup tables (LUTs) have demonstrated significant potential for emerging AI applications, particularly when deployed on field-programmable gate arrays (FPGAs) for edge computing. These…

While Spin Waves (SW) interaction provides natural support for low power Majority (MAJ) gate implementations many hurdles still exists on the road towards the realization of practically relevant SW circuits. In this paper we leave the SW…

The cluster multipole (CMP) expansion for magnetic structures provides a scheme to systematically generate candidate magnetic structures specifically including noncollinear magnetic configurations adapted to the crystal symmetry of a given…

Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…

Modular arithmetic, particularly modular reduction, is widely used in cryptographic applications such as homomorphic encryption (HE) and zero-knowledge proofs (ZKP). High-bit-width operations are crucial for enhancing security; however,…

A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission…

Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…

Dense Retrieval (DR) is now considered as a promising tool to enhance the memorization capacity of Large Language Models (LLM) such as GPT3 and GPT-4 by incorporating external memories. However, due to the paradigm discrepancy between text…

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is…

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…