Related papers: Low temperature (< 200{\deg}C) solution processed …
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room…
Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to improve flash reliability with a multitude of low-cost…
Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a…
This research investigates the structural, topological, electrical and optical properties of pulsed laser deposited polycrystalline BiFeO3 thin films on silicon and glass substrate at varying deposition temperatures ranging from 400 degC to…
Recent advances in logic schemes and fabrication processes have renewed interest in using superconductor electronics for energy-efficient computing and quantum control processors. However, scalable superconducting memory still poses a…
Low-temperature refrigeration technology constitutes a crucial component in space exploration. The small-scale, low-vibration Stirling-type pulse tube refrigerators hold significant application potential for space cooling. However, the…
Superconducting memory is a promising technology for data storage because of its speed, high energy efficiency, non-volatility, and compatibility with quantum computing devices. However, the need for cryogenic temperatures makes…
Tunable dielectric meta-surface nanostructures offer incredible performance in optical application due to their extraordinary tunability of the polarization and engineering the dispersion of light with low loss in infrared range. In this…
An optical quantum memory is a stationary device that is capable of storing and recreating photonic qubits with a higher fidelity than any classical device. Thus far, these two requirements have been fulfilled in systems based on cold atoms…
In-memory deep learning computes neural network models where they are stored, thus avoiding long distance communication between memory and computation units, resulting in considerable savings in energy and time. In-memory deep learning has…
An analysis of thermal transients from non-equilibrium ab initio molecular-dynamics simulations can be used to calculate the thermal conductivity of materials with a short phonon mean-free path. We adapt the approach-to-equilibrium…
This paper presents the different processing steps of a new generic surface micromachining module for MEMS hermetic packaging at temperatures around 180 degrees C based on nickel plating and photoresist sacrificial layers. The advantages of…
This paper presents the effectiveness of various stress conditions (mainly voltage and frequency) on detecting the resistive shorts and open defects in deep sub-micron embedded memories in an industrial environment. Simulation studies on…
In this work, we examine the potential of Physical Unclonable Functions (PUFs) that have been implemented on NAND Flash memories using programming disturbances to act as sustainable primitives for the purposes of lightweight cryptography.…
Quantum memories are key components in quantum information networks. Their ability to store and retrieve information on demand makes repeat-until-success strategies scalable. Warm alkali-metal vapours are interesting candidates for the…
Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of…
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…