Related papers: Low temperature (< 200{\deg}C) solution processed …
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
We have fabricated and successfully tested an analog vector-by-matrix multiplier, based on redesigned 10x12 arrays of 55 nm commercial NOR flash memory cells. The modified arrays enable high-precision individual analog tuning of each cell,…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…
The dielectric constant of amorphous solids at low temperatures is governed by the dynamics of tunneling systems, small groups of atoms which tunnel between quasi equivalent potential minima. Recent experiments showed that at temperatures…
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic…
Main memories play an important role in overall energy consumption of embedded systems. Using conventional memory technologies in future designs in nanoscale era causes a drastic increase in leakage power consumption and temperature-related…
We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and…
Since the internal temperature is less accessible than surface temperature, there is an urgent need to develop accurate and real-time estimation algorithms for better thermal management and safety. This work presents a novel framework for…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
Three-dimensional (3D)-stacking technology, which enables the integration of DRAM and logic dies, offers high bandwidth and low energy consumption. This technology also empowers new memory designs for executing tasks not traditionally…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
Cooling high-power electronics in multilayer integrated circuits (ICs) is challenging for existing cooling methods. In this work, we designed through-chip microchannels (TCMCs) that cross the entire chip perpendicularly to the layers, with…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…
Quantum memory capable of stopping flying photons and storing their quantum coherence is essential for scalable quantum technologies. A room-temperature broadband quantum memory will enable the implementation of large-scale quantum systems…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
Self-assembled nano and micro-structures, particularly those capable of responsive erasure and regeneration, have garnered significant interest for their applications in smart photonics and electronics. However, current techniques for…
Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling…