English
Related papers

Related papers: Native point defects from stoichiometry-linked che…

200 papers

We study the low-energy behavior of metals coupled to gapless bosons. This problem arises in several contexts in modern condensed matter physics; we focus on the theory of metals near continuous quantum phase transitions (where the boson is…

Strongly Correlated Electrons · Physics 2014-06-06 A. Liam Fitzpatrick , Shamit Kachru , Jared Kaplan , Steven A. Kivelson , S. Raghu

Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold…

Materials Science · Physics 2023-10-23 Pei Li , Song Li , Péter Udvarhelyi , Bing Huang , Adam Gali

Compound-tunable embedding potential (CTEP) method is proposed. A fragment of some chemical compound, "main cluster" in the present paper, is limited by boundary anions such that the nearest environmental atoms are cations. The CTEP method…

Chemical Physics · Physics 2021-05-12 D. A. Maltsev , Yu. V. Lomachuk , V. M. Shakhova , N. S. Mosyagin , L. V. Skripnikov , A. V. Titov

Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi…

Materials Science · Physics 2022-06-30 Daniel Nevola , Kevin F. Garrity , Nader Zaki , Jiaqiang Yan , Hu Miao , Sugata Chowdhury , Peter D. Johnson

An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling microscopy (STM), we demonstrate an atomically resolved lateral…

Mesoscale and Nanoscale Physics · Physics 2025-10-10 Ding-Ming Huang , Jian-Huan Wang , Jie-Yin Zhang , Yuan Yao , H. Q. Xu , Jian-Jun Zhang

The atomic and electronic structure of the p-type transparent amorphous semiconductor CuI is calculated by ab-initio molecular dynamics. It is found to consist of a random tetrahedrally bonded network. The hole effective mass is found to be…

Materials Science · Physics 2020-05-05 Zhaofu Zhang , Yuzheng Guo , John Robertson

In complex crystals close to melting or at finite temperatures, different types of defects are ubiquitous and their role becomes relevant in the mechanical response of these solids. Conventional elasticity theory fails to provide a…

We show that point defects in two-dimensional photonic crystals can support bound states in the continuum (BICs). The mechanism of confinement is a symmetry mismatch between the defect mode and the Bloch modes of the photonic crystal. These…

Discoveries of ordered quantum states of matter are of great fundamental interest, and often lead to unique applications. The most well known example -- superconductivity -- is caused by the formation and condensation of pairs of electrons.…

Electrides are ionic crystals with electrons acting as anions occupying well-defined lattice sites. These exotic materials have attracted considerable attention in recent years for potential applications in catalysis, rechargeable…

Materials Science · Physics 2025-06-06 Chang Liu , Mahfuza Mukta , Byungkyun Kang , Qiang Zhu

X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films. Both B-K XAS and XES spectra shows…

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable…

Materials Science · Physics 2011-04-08 Rocco Martinazzo , Simone Casolo , Gian Franco Tantardini

Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) method that integrates first-principles defect properties and…

Materials Science · Physics 2025-11-06 Leopoldo Diaz , Harold P. Hjalmarson , Jesse J. Lutz , Peter A. Schultz

Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our…

Materials Science · Physics 2022-07-25 Sharmila N. Shirodkar , Pratibha Dev

2D materials hold transformative promise for next-generation nanoelectronics. However, successfully integrating these materials from laboratory-scale discoveries into real-world devices depends on precisely controlling their properties,…

The buckled structure of silicene leads to the possibility of new kinds of line defects that separate regions with reversed buckled phases. In the present work we show that these new grain boundaries have very low formation energies, one…

Materials Science · Physics 2013-12-13 Matheus P. Lima , A. Fazzio , Antonio J. R. da Silva

In this study, we investigate the structure-stability relationship of hypothetical Nd-Fe-B crystal structures using descriptor-relevance analysis and the t-SNE dimensionality reduction method. 149 hypothetical Nd-Fe-B crystal structures are…

Materials Science · Physics 2020-10-28 Duong-Nguyen Nguyen , Duc-Anh Dao , Takashi Miyake , Hieu-Chi Dam

The defect chemistry of perovskite compounds is directly related to the stoichiometry and to the valence states of the transition-metal ions. Defect engineering has become increasingly popular as it offers the possibility to influence the…

Traditionally, the formation of off-stoichiometric compounds is believed to be the growth effect rather than the intrinsic tendency of the system. However, here, using the example of La3Te4, we demonstrate that in n-type gapped metals…

Materials Science · Physics 2022-12-08 Muhammad Rizwan Khan , Harshan Reddy Gopidi , Mateusz Wlazło , Oleksandr I. Malyi

We theoretically investigate defect formation energies in LaO$X$S$_2$ ($X=$Sb, Bi) using first-principles calculation. We find that the oxygen vacancy is relatively stable, where its formation energy is higher in $X=$ Sb than in $X=$ Bi. An…

Materials Science · Physics 2022-03-23 Masayuki Ochi , Kazuhiko Kuroki
‹ Prev 1 3 4 5 6 7 10 Next ›