Related papers: Modified spin-orbit couplings in uniaxially strain…
We investigate the effect of an applied uniaxial strain on the ferromagnetic instability due to long- range Coulomb interaction between Dirac fermions in graphene. In case of undeformed graphene the ferromagnetic exchange instability occurs…
We consider twisted bilayer and trilayer graphene in the presence of Rashba spin-orbit coupling and explore the physics of Moir\'e spintronics. The electronic charge density has a sharp step right at the magic angles $\theta_m$. As a…
A theory of spin relaxation in graphene including intrinsic, Bychkov-Rashba, and ripple spin-orbit coupling is presented. We find from spin relaxation data by Tombros et al. [Nature 448, 571 (2007).] that intrinsic spin-orbit coupling…
Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like…
We consider graphene on monolayer WSe$_2$ and the spin-orbit coupling induced by the transition-metal dichalcogenide substrate for application to spin-active devices. We study quantum dots and graphene quantum rings as tunable spin filters…
We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the…
The effect of strain in graphene is usually modeled by a pseudo-magnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance,…
In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit…
Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene,…
Ultraflat bands have already been detected in twisted bilayer graphene and twisted bilayer transition-metal dichalcogenides, which provide a platform to investigate strong correlations. In this paper, the electronic properties of twisted…
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological…
Uniaxial strain is known to modify significantly the electronic properties of graphene, a carbon single layer of atomic width. Here, we study the effect of applied strain on the composite excitations arising from the coupling of charge…
We investigate topological properties of models that describe graphene on realistic substrates which induce proximity spin-orbit coupling in graphene. A $\mathbb{Z}_2$ phase diagram is calculated for the parameter space of (generally…
Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…
We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$.…
Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…
The electronic implications of strain in graphene can be captured at low energies by means of pseudovector potentials which can give rise to pseudomagnetic fields. These strain-induced vector potentials arise from the local perturbation to…
In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…
We study forward scattering of 2D massless Dirac electrons at Fermi energy {\varepsilon} > 0 in single layer graphene through a 1D rectangular barrier of height {u_0} in the presence of uniform Rashba spin-orbit coupling (of strength…
We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and…