Related papers: Monatomic phase change memory
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
In the last decade phase change materials (PCM) research has switched from practical application in optical data storage toward electrical phase change random access memory technologies (PCRAM). As these devices are commercialised, we…
Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit…
Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of…
Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with…
Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new…
Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…
We propose here a new platform for a realization of novel nonvolatile optical switching devices that takes an advantage of high field confinement provided by plasmonics and multi-state programming capabilities of chalcogenide phase change…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However,…
Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical…
The functionalities of a wide range of optical and opto-electronic devices are based on resonance effects and active tuning of the amplitude and wavelength response is often essential. Plasmonic nanostructures are an efficient way to create…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
The discovery and optimization of phase-change and shape memory alloys remain a tedious and expensive process. Here a simple computational method is proposed to determine the ideal phase-change material for a given alloy composed of three…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
In this work we introduce a compact model for mushroom-type phase-change memory devices that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and…