Related papers: Monatomic phase change memory
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
It is widely agreed that phase change materials (PCMs) are of high interest for sustainable energy future. Many of the applications require anti-leakage properties of PCM, that can be accomplished through PCM encapsulation. In this study,…
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…
Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple…
Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals extending from graphene, transition metal dichalcogenides to black phosphorous. This is…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
We present an integrated switch that combines plasmonic and neuromorphic technologies with a single sub-stoichiometric VO2-x nanoparticle. The presented device acts as a versatile plasmonic switch with dual thermal and electrical…
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Plasmonics is a research area merging the fields of optics and nanoelectronics by confining light with relatively large free-space wavelength to the nanometer scale - thereby enabling a family of novel devices. Current plasmonic devices at…
We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…
The integration of silicon photonics (SiPh) and phase change materials (PCMs) has created a unique opportunity to realize adaptable and reconfigurable photonic systems. In particular, the nonvolatile programmability in PCMs has made them a…
Controlling phase transitions in quantum systems via coupling to reservoirs has been mostly studied for idealized memory-less environments under the so-called Markov approximation. Yet, most quantum materials and experiments in the solid…
Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…
Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
By means of Monte Carlo simulations on a kinetic model, we demonstrate that the efficiency of a photoinduced phase change can in general be enhanced drastically by using a superstructure of an appropriate combination of two components. This…