Related papers: Quantifying Temperature-dependent Substrate Loss i…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to…
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the…
We study the response of several microwave resonators made from superconducting NbTiN thin-film meandering nanowires with large kinetic inductance, having different circuit topology and coupling to the transmission line. Reflection…
Stefan-Boltzmann's law indicates that far-field blackbody radiation scales at the fourth power of temperature. The temperature dependence of radiative heat transfer in the near field is expected to be very different due to the contribution…
The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality…
We have studied Nb lambda/2 coplanar-waveguide (CPW) resonators whose resonant frequencies are 10-11 GHz. The resonators have different film thicknesses, t=0.05, 0.1, 0.2, and 0.3 um. We measured at low temperatures, T=0.02-5 K, one of the…
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique…
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…
Superconducting coplanar-waveguide (CPW) resonators are one of the key devices in circuit quantum electrodynamics (cQED). Their performance can be limited by dielectric losses in the substrate and in the material interfaces. Reliable…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
We report about the first results obtained with our Ultra High Vacuum cryostat recently commissioned at HMI to study Ultra Cold Neutrons(UCN) loss rate under low temperatures(down to 4K) and well controlled sample environment. Our analysis…
Superconducting coplanar waveguide (SCPW) resonators have a wide range of applications due to the combination of their planar geometry and high quality factors relative to normal metals. However, their performance is sensitive to both the…
We study the loss rate for a set of lambda/2 coplanar waveguide resonators at millikelvin temperatures (20 mK - 900mK) and different applied powers (3E-19 W - 1E-12 W). The loss rate becomes power independent below a critical power. For a…
As superconducting kinetic inductance detectors (KIDs) continue to grow in popularity for sensitive submillimeter detection and other applications, there is a drive to advance toward lower-loss devices. We present measurements of diagnostic…
Low-loss superconducting rf devices are required when used for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packaging of our superconducting resonator devices affect…
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\mu$m). We have studied the effect of short gate length on the small signal parameters, linearity…
The development of large-scale quantum systems increasingly relies on the close integration of heterogeneous components such as qubits, control electronics, and readout circuits, making thermal management at cryogenic temperatures a central…
Measuring the internal quality factor of coplanar waveguide superconducting resonators is an established method of determining small losses in superconducting devices. Traditionally, the resonator losses are only attributed to two-level…