Related papers: Terahertz Plasmonic Detector Controlled by Phase A…
The new TeraFET design with identical source and drain antennas enables a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz (THz) range of frequencies at room temperature. It could…
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…
p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond…
We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the…
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to…
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase…
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable…
We report on the numerical and theoretical results of sub-THz and THz detection by a current-driven InGaAs/GaAs plasmonic Field-Effect Transistor (TeraFET). New equations are developed to account for the channel length dependence of the…
We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral…
The device applications of plasmonic systems such as graphene and two dimensional electron gases (2DEGs) in III-V heterostructures include terahertz detectors, mixers, oscillators and modulators. These two dimensional (2D) plasmonic systems…
Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…
Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a…
We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction…
Plasmonic detectors have the potential to provide a method of rapid spectroscopy without the need of moving mirrors or gratings. Previous measurements have demonstrated frequency tunable detection based on plasmonic excitations, however…