Related papers: Terahertz Plasmonic Detector Controlled by Phase A…

We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with…

The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity…

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…

Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves…

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs…

We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…

This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…

We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors…

We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The…

A terahertz metamaterial consisting of radiative slot antennas and subradiant complementary split-ring resonators exhibits plasmon induced opacity in a narrow spectral range due to the destructive interference between the bright and dark…

Graphene plasmons confine incident terahertz fields far below the diffraction limit and, when hosted by a gate-defined Fabry-Perot cavity, enable electrically tunable, frequency-selective photodetectors. In a magnetic field, these plasmons…

This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect…

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two…

We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…

We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz…

This paper presents an efficient approach for exciting a dielectric resonator antenna (DRA) in the terahertz frequencies by means of a graphene plasmonic dipole. Design and analysis are performed in two steps. First, the propagation…

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable…

Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of…