Related papers: Probing strain modulation in a gate-defined one di…
Heat capacity of the nuclear spin system (NSS) in GaAs-based microstructures has been shown to be much greater than expected from dipolar coupling between nuclei, thus limiting the efficiency of NSS cooling by adiabatic demagnetization. It…
We investigate the dark axisymmetric plasmon spectrum for partially gated two-dimensional gas of the disk shape. The extension of the central gate spot provides a change in plasmon dispersion from the root to a linear dependence on the wave…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Nematic order in the iron-based superconductors is closely tied to a lattice distortion and a structural transition from tetragonal to orthorhombic symmetry. External stress of the appropriate symmetry acts as a conjugate field of the…
The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a…
Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…
We have applied a novel scanned probe method to directly resolve the interior structure of a GaAs/AlGaAs two-dimensional electron system in a tunneling geometry. We find that the application of a perpendicular magnetic field can induce…
Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain,…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
The modified rigorous coupled-wave analysis technique is developed to describe the optical characteristics of the plasmonic structures with the grating-gated delta-thin conductive channel in the far- and near-field zones of electromagnetic…
Grain growth is a key process in the thermomechanical treatment of metals. Recently, the presence of local residual stresses within fully recrystallized grains has attracted increasing interest in connection with shear-coupled grain…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
A suspended, doubly clamped single wall carbon nanotube is characterized at cryogenic temperatures. We observe specific switching effects in dc-current spectroscopy of the embedded quantum dot. These have been identified previously as…
The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying…
Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $\rho$, Hall coefficient $R_{H}$,…