Related papers: Mid-IR non-volatile silicon photonic switches usin…
We demonstrate a one-dimensional optical phased array on an integrated silicon platform for operation at 1.55 microns. Light is emitted end-fire from the chip edge where the waveguides are terminated. The innovative design and high…
We propose and demonstrate a passively biased 2 by 2 thermo-optic switch with high power efficiency and fast response time. The device benefits from the highly concentrated optical field of a slot waveguide mode and the strong thermo-optic…
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric…
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit…
In the past decades, silicon photonic integrated circuits (PICs) have been considered as a promising approach to solve the bandwidth bottleneck in optical communications and interconnections. Despite significant advances, large-scale PICs…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
We present suspended heater structures fabricated in a standard C- and O-band silicon (Si) photonics platform that can achieve sufficiently high local temperatures to induce effective refractive index trimming of Si and silicon nitride…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
Integrating 2D materials onto on-chip photonic devices holds significant potential for nonlinear frequency conversion across various applications. The lack of inversion symmetry in monolayers of transition metal dichalcogenides (TMDs),…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon…
Even though submicron silicon waveguides have been proposed for dense integration of photonic devices, to date the lightwave circuits on the market mainly rely on waveguides with micron-scale core dimensions. These larger waveguides feature…
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically…
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A…
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…
Integrated waveguides exhibiting efficient second-order nonlinearities are crucial to obtain compact and low power optical signal processing devices. Silicon nitride (SiN) has shown second harmonic generation (SHG) capabilities in resonant…
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically…
Optical phase shifters are extensively used in integrated optics not only for telecom and datacom applications, but also for sensors and quantum computing. While various active solutions have been demonstrated, progress in passive phase…
In this study, we present an all-optical reflection modulator for 2$\mu$m communication band exploiting a nano-gear-array metasurface and a phase-change-material Ge$_2$Sb$_2$Te$_5$ (GST). The reflectance of the structure can be manipulated…
We propose and demonstrate a hybrid waveguide platform using layered amorphous silicon and silicon nitride. The waveguide offers more degrees of freedom to design waveguides with desired confinement, effective index and polarization…
The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the…