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Related papers: Polymorphism of Bulk Boron Nitride

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Hexagonal boron nitride is widely used as a substrate for two-dimensional materials in both electronic and photonic devices. Here, we demonstrate that two-dimensional hexagonal boron nitride is also an ideal substrate for one-dimensional…

Mesoscale and Nanoscale Physics · Physics 2021-01-01 N. Fang , K. Otsuka , A. Ishii , T. Taniguchi , K. Watanabe , K. Nagashio , Y. K. Kato

Water, a ubiquitous and fundamental substance, plays a critical role across a wide range of disciplines from physics and chemistry to biology and engineering. Despite theoretical predictions of several phases of two-dimensional (2D) ice…

Materials Science · Physics 2025-10-10 Bingzheng Wu , Jianming Wu , Sai Duan , Xin Xu

In the present work we have proposed the method that allows one to easily estimate hardness and bulk modulus of known or hypothetical solid phases from the data on Gibbs energy of atomization of the elements and corresponding covalent…

Materials Science · Physics 2011-02-08 Vladimir A. Mukhanov , Oleksandr O. Kurakevych , Vladimir L. Solozhenko

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm \mu m$. We show…

Newly discovered van der Waals materials like MoS$_2$, WSe$_2$, hexagonal boron nitride (h-BN), and recently $\mathrm{C}_2\mathrm{N}$ have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of…

Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science…

Studies of polynitrogen phases are of great interest for fundamental science and for the design of novel high energy density materials. Laser heating of pure nitrogen at 140 GPa in a diamond anvil cell led to the synthesis of a polymeric…

Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their…

Materials Science · Physics 2017-04-10 Jiafeng Xie , Z. Y. Zhang , D. Z. Yang , M. S. Si , D. S. Xue , Xiaohui Deng

Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and…

Mesoscale and Nanoscale Physics · Physics 2023-07-21 Song Li , Anton Pershin , Pei Li , Adam Gali

The interlayer sliding energy landscape of hexagonal boron nitride (h-BN) is investigated via a van der Waals corrected density functional theory approach. It is found that the main role of the van der Waals forces is to "anchor" the layers…

We find, with the use of first-principles calculations, that a single-atom-thick boron-nitride (BN) sheet exhibits an unusual nonlinear electromechanical effect: it becomes macroscopically polarized when bent out-of-plane. The direction of…

Materials Science · Physics 2008-10-13 Ivan Naumov , Alexander M. Bratkovsky , V. Ranjan

Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal…

We report the growth of high quality rhombohedral boron nitride (rBN) crystals by the iron flux method at atmospheric pressure. In contrast to the lamellar structure of standard hexagonal boron nitride (hBN) covering the metal ingot, the…

Materials Science · Physics 2025-09-23 W. Desrat , M. Moret , J. Plo , T. Michel , A. Ibanez , P. Valvin , V. Jacques , I. Philip-Robert , G. Cassabois , B. Gil

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The…

Materials Science · Physics 2021-05-18 Adrian Hemmi , Huanyao Cun , Steven Brems , Cedric Huyghebaert , Thomas Greber

This study explores the properties of nanopowders synthesized under high-temperature, non-equilibrium conditions in a high-flux optical furnace in a nitrogen flow. Boron powders served as the starting material, and the intense thermal…

Materials Science · Physics 2025-11-14 Lina Sartinska

Density functional theory calculations have been used to identify stable layered Li-$M$-B crystal structure phases derived from a recently proposed binary metal-sandwich (MS) lithium monoboride superconductor. We show that the MS lithium…

Superconductivity · Physics 2009-11-13 Aleksey N. Kolmogorov , Matteo Calandra , Stefano Curtarolo

The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…

Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and…

Materials Science · Physics 2014-03-06 Lu Hua Li , Jiri Cervenka , Kenji Watanabe , Takashi Taniguchi , Ying Chen

Single-layer $\it{h}$-BN is known to have edges with unique magnetism, however, in the commonly fabricated multilayer $\text{AA}^{\prime}$-$\it{h}$-BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons…

Materials Science · Physics 2020-10-28 Mehmet Dogan , Marvin L. Cohen

Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane…

Mesoscale and Nanoscale Physics · Physics 2020-10-02 Michael Hoese , Prithvi Reddy , Andreas Dietrich , Michael K. Koch , Konstantin G. Fehler , Marcus W. Doherty , Alexander Kubanek