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Heterostructures between two-dimensional quantum spin Hall insulators (QSHI) and superconducting materials can allow for the presence of Majorana Fermions at their conducting edge states. Although a strong interface hybridization helps…

Superconductivity · Physics 2023-08-16 Anirban Das , Bent Weber , Shantanu Mukherjee

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their…

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…

Quantum localization via atomic point defects in semiconductors is of significant fundamental and technological importance. Quantum defects in monolayer transition-metal dichalcogenide semiconductors have been proposed as stable and…

Materials Science · Physics 2020-07-30 Chitraleema Chakraborty , Christopher J. Ciccarino , Prineha Narang

The transport properties of nanostructured systems are deeply affected by the geometry of the effective connections to metallic leads. In this work we derive a conductance expression for interacting systems whose connectivity geometries do…

Mesoscale and Nanoscale Physics · Physics 2017-09-15 Luis G. G. V. Dias da Silva , Caio H. Lewenkopf , Edson Vernek , Gerson J. Ferreira , Sergio E. Ulloa

The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…

The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and…

Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission…

Mesoscale and Nanoscale Physics · Physics 2021-10-18 Alberto Ciarrocchi , Dmitrii Unuchek , Ahmet Avsar , Kenji Watanabe , Takashi Taniguchi , Andras Kis

The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of…

Materials Science · Physics 2023-01-26 Lei Zhang , Kun Liu , Fanyi Kong , Xue Han , Jianxun Dai , Mengmeng Wang , Changsen Sun , Huolin Huang , Lujun Pan , Dawei Li

We theoretically investigate the dynamics of modulation instability (MI) in two-dimensional spin-orbit coupled Bose-Einstein condensates (BECs). The analysis is performed for equal densities of pseudo-spin components. Different combination…

Quantum Gases · Physics 2017-05-22 S. Bhuvaneswari , K. Nithyanandan , P. Muruganandam , K. Porsezian

The hunt for high temperature superfluidity has received new impetus from the discovery of atomically thin stable materials. Electron-hole superfluidity in coupled MoSe2-WSe2 monolayers is investigated using a mean-field multiband model…

Superconductivity · Physics 2020-07-01 Sara Conti , Matthias Van der Donck , Andrea Perali , Francois M. Peeters , David Neilson

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigated the effect of stacking configuration, bi-axial…

Computational Physics · Physics 2018-02-27 Kanak Datta , Quazi D. M. Khosru

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the…

Materials Science · Physics 2022-03-16 Wen Wan , Darshana Wickramaratne , Paul Dreher , Rishav Harsh , I. I. Mazin , Miguel M. Ugeda

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

Materials Science · Physics 2014-02-10 Santosh KC , Roberto C. Longo , Robert M. Wallace , Kyeongjae Cho

Understanding the magnetic properties of the various Mn doping configurations that can be encountered in $2H$-MoS$_2$ monolayer could be beneficial for its use in spintronics. Using density functional theory plus Hubbard U (DFT$+$U)…

Materials Science · Physics 2019-09-04 Adlen Smiri , Iann Gerber , Samir Lounis , Sihem Jaziri

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure.…

Mesoscale and Nanoscale Physics · Physics 2016-06-10 Amithraj Valsaraj , Jiwon Chang , Amritesh Rai , Leonard F. Register , Sanjay K. Banerjee

When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…

Mesoscale and Nanoscale Physics · Physics 2018-12-19 G. Dezi , N. Scopigno , S. Caprara , M. Grilli

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at…

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function…

Strongly Correlated Electrons · Physics 2009-11-13 Satoshi Okamoto
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