Related papers: Rectification in Spin-Orbit Materials Using Low En…
Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic…
Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…
We provide a transmission line representation for channels exhibiting spin-momentum locking (SML) which can be used for both time-dependent and steady-state transport analysis on a wide variety of materials with spin-orbit coupling such as…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
Understanding the dynamics of the magnetic skyrmion, a particle-like topologically stable spin texture, and its response dynamics to external fields are indis-pensable for the applications in spintronic devices. In this letter, the Lorentz…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This…
The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information…
We improved a previously proposed method of using closed-orbit modulation for linear optics correction. Instead of fitting individual closed orbits, the improved method decomposes the orbit oscillation data into two orthogonal modes and…
Spin-orbit torque in heavy metal/ferromagnet heterostructures with broken spatial inversion symmetry provides an efficient mechanism for manipulating magnetization using a charge current. Here, we report the presence of a spin torque in a…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the…
Micro-electro-mechanical resonators employing a magnetic element have been proposed for magnetic field sensing applications, but the integration of magnetic materials with standard semiconductor compounds is challenging and requires complex…
In bilayers consisting of a normal metal (N) with spin-orbit coupling and a ferromagnet (F), the combination of the spin-Hall effect, the spin-transfer torque, and the inverse spin-Hall effect gives a small correction to the in-plane…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…