Related papers: Harnessing ferroelectric domains for negative capa…
The extensive experimental and computational search for multifunctional materials has resulted in the development of semiconductor and oxide systems, such as (Ga,Mn)N, (Zn,Cr)Te, and HfO2, which exhibit surprisingly stable ferromagnetic…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180{\deg} domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on…
Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…
A simplified model is introduced and analysed to show, that for the Landau-Lifshitz equation stable, steady state solutions of domain type exist in ferromagnetic systems, strongly driven by external transverse fields. These dynamic domain…
The control of ferroelectric domain walls and their dynamics on the nanoscale becomes increasingly important for advanced nanoelectronics and novel computing schemes. One common approach to tackle this challenge is the pinning of walls by…
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…
Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90{\deg} domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns…
We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…
Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…
Bi-stable arched beams exhibiting Euler-Bernoulli snap-through buckling are vastly used as electronic devices in various applications, such as memory devices, energy harvesters, sensors, and actuators. Recently, we reported the realization…
The physics of the "Pi" phase shift in ferromagnetic Josephson junctions enables a range of applications for spin-electronic devices and quantum computing. In this respect our research is devoted to the evaluation of the best materials for…
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic…