Related papers: Harnessing ferroelectric domains for negative capa…
Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and…
Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new…
We propose a method that allows power conversion from DC magnetic fields to AC electric voltages using domain wall (DW) motion in ferromagnetic nanowires. The device concept relies on spinmotive force, voltage generation due to…
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation…
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…
Investigations of dielectric properties of water in nanoconfinement are highly relevant for various applications. Here, using a simple capacitor model, we show that the low dielectric constant of nanoconfined water found in molecular…
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…
Several experiments suggest that the charge carriers in the normal state of certain cuprate superconductors reside on domain walls. In an earlier paper, we suggested that several aspects of the anomalous dynamical behavior of these…
The magnetization reversal of three-segment cylindrical nanoelements comprising of alternating nanowire and nanotube sections is investigated by means of Monte Carlo simulations. Such nanoelements may feature a three-state behaviour with an…
Hot electrons injection in carbon nanotubes (CNTs ) where in addition to applied dc field ($\mathbf{E}$), there exist simultaneously a quasi-static ac electric field (i.e. when the frequency $\omega$ of ac field is much less than the…
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…
We consider a nanoelectromechanical weak link composed of a carbon nanotube suspended above a trench in a normal metal electrode and positioned in a gap between two superconducting leads. The nanotube is treated as a movable single-level…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
Understanding the dynamics of electrical signals within neuronal assemblies is crucial to unraveling complex brain function. Despite recent advances in employing optically active nanostructures in transmembrane potential sensing, there…
We present experimental evidence of metastable magnetic domains in cylindrical CoNi nanowires. Transverse (perpendicular) domains have been previously observed only in flat nanostrips. Here they are found together with more conventional…
Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and…
Nanomagnetism has recently attracted explosive attention, in particular, because of the enormous potential applications in information industry, e.g. new harddisk technology, race-track memory[1], and logic devices[2]. Recent technological…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…