Related papers: MOSFET Characterization and Modeling at Cryogenic …

Atomic-resolution cryogenic scanning transmission electron microscopy (cryo-STEM) has provided a path to probing the microscopic nature of select low-temperature phases in quantum materials. Expanding cryo-STEM techniques to broadly tunable…

Efficient thermal management is critical for cryogenic CMOS circuits, where local heating can compromise device performance and qubit coherence. Understanding heat flow at the nanoscale in these multilayer architectures requires localized,…

Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…

Scaling superconducting quantum computers to the fault-tolerant regime calls for a commensurate scaling of the classical control and readout stack. Today's systems largely rely on room-temperature, rack-based instrumentation connected to…

A quasi-optical (QO) test bench was designed, simulated, and calibrated for characterizing S-parameters of devices in the 220-330 GHz (WR-3.4) frequency range, from room temperature down to 4.8 K. The devices were measured through vacuum…

Nano-electro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far…

Cryogenic characterization of transition-edge sensor (TES) bolometers is a time- and labor-intensive process. As new experiments deploy larger and larger arrays of TES bolometers, the testing process will become more of a bottleneck. Thus…

High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…

This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…

We developed a simple, flexible, low-cost, and computer-controlled cryogenic temperature measurement system for undergraduate instructional laboratories. An Arduino microcontroller board measures the voltage across a silicon diode to…

Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…

Complementary-metal-oxide-semiconductor (CMOS) is the most widely spread technology for integrated circuits fabrication. Each foundry offers different technology nodes that are characterized by the minimum feature size, which is the…

Astronomical observations of cosmic sources in the far-infrared and X-ray bands require extreme sensitivity. The most sensitive detectors are cryogenic bolometers and calorimeters operating typically at about 100 mK. The last stage of…

Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state…

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution,…

In-memory computing (IMC) is an emerging non-von Neumann paradigm that leverages the intrinsic physics of memory devices to perform computations directly within the memory array. Among the various candidates, phase-change memory (PCM) has…

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and…

Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (HCD) becomes worsening at cryogenic temperature, which…

Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…

This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded…