Related papers: Four-wave mixing and nonlinear parameter measureme…
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic…
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in…
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to…
Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar…
We describe an all-fiber nonlinear interferometer based on four-wave mixing in highly nonlinear fiber. Our configuration realizes phase-sensitive interference with 97% peak visibility and >90% visibility over a broad 554 GHz optical band.…
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth…
The theoretical study of the optical properties of TE- and TM- modes in a four-layer structure composed of the magneto-optical yttrium iron garnet guiding layer on a dielectric substrate covered by planar nanocomposite guiding multilayer is…
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the…
The aim of this work is to design and implement an embedded system capable to characterize some relevant figures of merit of Gallium Nitride and Silicon Carbide transistors in a wide range of frequencies. In particular, the designed system…
Millimeter-wave superconducting devices offer a platform for quantum experiments at temperatures above 1 K, and new avenues for studying light-matter interactions in the strong coupling regime. Using the intrinsic nonlinearity associated…
We present a theoretical study of the dispersion and energy properties of the eigenwaves (TE- and TM- modes) in a four-layer structure composed of a magneto-optical yttrium iron garnet guiding layer on a dielectric substrate covered by a…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass…
We present the first experimental investigation of nonlinear optical properties of graphene flakes. We find that at near infrared frequencies a graphene monolayer exhibits a remarkably high third-order optical nonlinearity which is…
Enhancing nonlinear optical effects is critical to improving the performance of many functional devices for nonlinear and quantum optical applications. Here we study the possibility of bending a waveguide to enhance the photon pair…