Related papers: Single-Spin Relaxation in a Synthetic Spin-Orbit F…
We report measurements of 19F nuclear spin-lattice relaxation 1/T1 as a function of temperature and external magnetic field in LiY0.998Ho0.002F4 single crystal, a single-ion magnet exhibiting interesting quantum effects. The 19F 1/T1 is…
We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot…
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light…
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…
The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice (T1) and spin-spin (T2) relaxation times of electrons. Minimising the effects of spin-orbit…
Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $\Gamma$ and $L$ valleys included. We show that the spin relaxation…
Interaction of the electron spin with local elastic twists due to transverse phonons has been studied. Universal dependence of the spin relaxation rate on the strength and direction of the magnetic field has been obtained in terms of the…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
Hidden magnetic order of Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$, $x = 0.05$ and 0.1, has been studied using muon spin relaxation spectroscopy. In zero applied field and weak longitudinal fields ($\mu_0H_L \lesssim 2$~mT), muon spin relaxation data can…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…
We calculate the magnetisation relaxation in the short-time regime for an ensemble of nanomagnets in the presence of a low-frequency external AC biasing field, at temperatures lower than the magnetic anisotropy energy of the individual…
Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based…
Electron spin relaxation in a spin-polarized quantum Hall state is studied. Long spin relaxation times that are at least an order of magnitude longer than those measured in previous experiments were observed and explained within the…